Owing to the short wavelength of EUV light, developing semiconductor lithography into its spectral range entails enormous demands on the quality of surfaces and layers. Fraunhofer IOF has developed a process which enables it to characterize EUV mirror substrates over a large area with great sensitivity before they are coated. In addition, it has developed a system to characterize – specific to a wavelength – the reflection and scattering properties of EUV layer systems at 13.5 nm. Together with the existing modeling techniques and EUV system technologies of the Fraunhofer ILT, this results in a closed chain for the characterization of EUV components.
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Prof. Dr. Norbert Kaiser
Fraunhofer Institute for Applied Optics and Precision Engineering IOF
Albert-Einstein-Str. 7
07745 Jena
Phone +49 3641 807-321
Fax +49 3641 807-601