
Extreme ultraviolet and soft x-ray radiation in the spectral range between 1 nm and 50 nm from dense, hot plasmas makes it possible to construct compact powerful radiation sources. Fraunhofer ILT examines both laser-produced (LPP) and discharge-produced plasmas (DPP). For applications that require, in particular, a highly brilliant source, LPPs are preferred. In contrast, discharge-produced plasmas are distinguished by their high efficiency in converting electrical energy into EUV light, their simple construction and are, therefore, a more cost-effective alternative.
The Fraunhofer ILT develops radiation sources in the X-ray and EUV range which are used, for example, in lithography and measurement technology to produce chips, where the focus is on characterizing optical systems and diagnostics, to conduct service-life tests of multilayer mirrors or to inspect for defects.